Three temperature zone PECVD graphene preparation
The plasma enhancement CVD system consists of plasma generator, three-temperature tubular furnace, radio frequency power supply and vacuum system. Plasma enhanced CVD system in order to make the chemical reaction at lower temperature, the use of plasma activity to promote the reaction, so the CVD is called plasma enhanced chemical vapor deposition method (PECVD), the PECVD graphene film preparation equipment with the radio frequency output of 13.56Mhz make film atoms gas ionization, forming plasma, using plasma strong chemical activity, improve the reaction conditions, using the plasma activity to promote the reaction, deposit the desired film on the substrate.
Product Description
The Plasma-enhanced Chemical Vapor Deposition (PECVD) system, known as PECVD-T01, is meticulously designed for precise thin film deposition processes across various applications. With a broad range of uses, including graphene, sulfide, and nanomaterial preparation, this system is versatile and adaptable to diverse test sites. It facilitates the deposition of SiOx, SiNx, amorphous silicon, microcrystalline silicon, nanosilicon, SiC, and diamond-like films on sheet or similar-shaped surfaces, offering the capability to deposit both p-type and n-type doped films. The resulting films exhibit exceptional uniformity, tightness, adhesion, and insulation, making it a valuable tool in cutting tools, high precision molds, hard coatings, high-end decorations, and other specialized fields.
PECVD-T01 operates within a temperature range of 0 to 1100°C, ensuring precise control with an accuracy of ±1°C. Its three-temperature zone pipe furnace, constructed from high-purity quartz, allows for a uniform heating temperature area divided into three segments of 200mm each. The AI-PID control system with a 30-section process curve and multiple profile storage enhances process customization. The sealing mechanism involving stainless steel vacuum flanges ensures a reliable, airtight environment, crucial for thin-film deposition processes. The RF power supply, integral to the system, boasts adjustable output power ranging from 0 to 300W with remarkable precision and stability. Operating at a noise level of ≤55dB, it utilizes air cooling for efficient heat dissipation. The mass flowmeter with three-way stainless steel needle valves allows precise control of gas flow within three separate channels, accommodating a wide range of flow rates with remarkable accuracy.
The vacuum and sub-atmospheric system, equipped with a molecular pump system, ensures reliable vacuum conditions for the PECVD process, operating at a high pumping speed of 600L/S. The water cooling system (CW-3200) efficiently dissipates heat, contributing to system stability during operation. Operating on a standard voltage of 220V at 50Hz, the system is compatible with both laboratory and industrial power supplies, making it a comprehensive and reliable solution for precise thin film deposition across various applications.
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