Plasma Enhanced CVD system PECVD-T01
Plasma enhanced CVD system consists of a plasma generator, a three-heating zone tube furnace, a single-heating zone tube furnace, an RF power supply, and a vacuum system.
Product Description
The Plasma Enhanced Chemical Vapor Deposition (PECVD) system harnesses the power of plasma to facilitate chemical reactions at lower temperatures, offering advanced film deposition capabilities. By ionizing a gas containing film constituent atoms through a 13.56 MHz RF output, a plasma is formed in the vacuum chamber. The system optimizes the chemical activity of the plasma to enhance reaction conditions, promoting efficient film deposition on substrates. This versatile technology finds applications in graphene preparation, sulfide preparation, nanometer material synthesis, and beyond.
Featuring two distinct tube furnaces, the PECVD system accommodates diverse requirements. The three-heating zone tube furnace (Model O1200-50IIIT) utilizes high-purity quartz material, offering a 50mm diameter tube with a total length of 2830mm. The furnace chamber spans 660mm, incorporating a heating zone divided into 200mm sections. Precise temperature control within the 0 to 1100℃ range, with a temperature accuracy of ±1℃, is complemented by a choice between 30 or 50 segment program temperature control modes. The LCD interface provides user-friendly monitoring, and a 304 stainless steel vacuum flange ensures effective sealing. Operating at a vacuum level of 4.4E-3Pa, the system is powered by AC:220V at 50/60Hz.
Similarly, the single-heating zone tube furnace (Model O1200-50IT) maintains a 50mm diameter tube with a total length of 2830mm. The furnace chamber, with a length of 440mm, encompasses a heating zone of 400mm and a constant temperature zone of 200mm. The system mirrors its three-heating zone counterpart in temperature range, accuracy, and sealing mechanism.
Both systems share an RF output system, providing a power range of 0 to 500W at a working frequency of 13.56MHz. Noteworthy for its stability, efficiency, and power factor, the RF output system incorporates an LCD display and a range of control options. Robust power protection settings ensure safe operation.
The gas supply system features a four-channel mass flowmeter with dedicated channels for H2, CH4, N2, and Ar. Controlled through an LCD touch screen, the system offers precise flow control with needle valves for individual channels. The exhaust system combines a mechanical pump and a rotary vane pump, achieving a pumping rate of 1.1L/S and connecting through a KF16 exhaust interface. Vacuum measurement is conducted using a resistance gauge, reaching an ultimate vacuum level of 1.0E-1Pa.
Additional features include a sliding rail for efficient movement of the furnace, facilitating rapid temperature changes. The PECVD system is a comprehensive solution for various applications, ensuring uniform, compact, adherent, and insulated film depositions for applications ranging from high-precision molds to hard coatings and high-end decoration.
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