High vacuum magnetron sputtering coater

SKU: MND-134049

High vacuum magnetron sputtering coater is mainly composed of sputtering vacuum chamber, magnetron sputtering target, substrate water-cooled heating revolution table, working gas path, pumping system, installation machine, vacuum measurement and electronic control system.

 Product Description

The High Vacuum Magnetron Sputtering Coater stands as a powerful tool for the precision preparation of advanced thin film materials, encompassing nanometer single-layer and multi-layer functional films, hard films, metal films, semiconductor films, and dielectric films. Its applications extend across the expansive landscape of thin film material research and small-batch production, finding utility in universities, colleges, and scientific research institutes.
 

This coater boasts an innovative design, featuring a piriform vacuum chamber with dimensions of dia. 450×350mm. The vacuum system, comprising a compound molecular pump, mechanical pump, and gate valve, achieves an exceptional ultimate pressure of ≤2.010⁻⁵Pa after meticulous baking and degassing processes. Notably, the system exhibits a rapid recovery to up to 6.610⁻⁴Pa in a mere 40 minutes, employing a brief exposure to the atmosphere and dry nitrogen filling to initiate efficient pumping.
 

The magnetron target configuration includes five sets of permanent magnetic targets, each with a target size of Ø60mm. One of these targets is specifically tailored for sputtering ferromagnetic materials, offering versatility in material compatibility with RF and DC modes. The adjustable distance between the target and sample spans from 90mm to 130mm. The coater's functionality is further enhanced by a water-cooling substrate heating revolution table featuring six stations. One station is equipped with a heating furnace, while the remaining stations cater to water-cooled substrates, accommodating a sample size of Ø30mm with a capacity for six pieces. The table exhibits a mode of motion ranging from 0 to 360℃, enabling reciprocating rotary motion. The impressive maximum heating temperature reaches 600℃±1℃, complemented by a substrate negative bias of -200V.
 

Precision gas control is achieved through the incorporation of a 2-circuit mass flow controller in the gas circuit system. The comprehensive computer control system manages various critical aspects of the coater, including sample rotation, baffle switch, target identification, and more. The main machine efficiently utilizes a floor space of 1300×800mm², while the accompanying electrical cabinet maintains dimensions of 700×700mm², collectively embodying a sophisticated and high-performance solution for advanced thin film material preparation.


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