Dual temperature zone CVD chemical vapor deposition system
CVD (Chemical Vapor Deposition) is a commonly used thin film deposition technique, which involves the reaction of gas-phase reactants with a substrate surface at high temperatures to form a thin film. Here are some common technical parameters of a CVD system.
Product Description
CVD (Chemical Vapor Deposition) systems represent a comprehensive suite of technical parameters designed to facilitate the precise deposition of thin films. Operating within a reaction chamber characterized by adaptable temperatures ranging from several hundred to several thousand degrees Celsius, Specification 1 outlines the temperature flexibility essential for tailored reactions. The choice of reaction gases, specified in Specification 2, plays a pivotal role in shaping the composition and structure of the resulting thin film, with gases such as ammonia, hydrogen, oxygen, and silicon dioxide being key contributors.
Maintaining pressure within the reaction chamber, as detailed in Specification 3, is critical, with the pressure range calibrated to the nature of reactants and specific reaction conditions. The variable of reaction time, highlighted in Specification 4, spans from minutes to hours, directly influencing thin film thickness and quality and adjusted to meet specific deposition goals. Consideration for substrate material, outlined in Specification 5, adds further versatility, with CVD systems accommodating substrates like silicon, glass, metals, based on the intended application and desired thin film properties.
CVD vapor deposition systems, specified in Specification 6, find extensive utility across materials science and engineering, contributing significantly to the preparation of functional thin films for applications in semiconductor technology, optoelectronics, energy generation, storage, biomedical sciences, and beyond.
The technical parameters for crucial components such as the RF power supply system, tube furnace, gas supply system, vacuum system, and power supply are outlined in detail. The RF power supply system operates with stability at 13.56MHz±0.005%, featuring a power output range of 0 to 300W. The tube furnace, constructed from high-purity quartz, ensures precision with a maximum continuous working temperature of 1100°C and a sealing mechanism using a 304 stainless steel vacuum flange. The gas supply system, Model 6Z, incorporates six channels with mass flow controllers, each designed for specific gases and precise measurement ranges. The vacuum system utilizes a double-stage rotary vane pump, achieving an ultimate vacuum level of 1.0E-1Pa. Finally, the power supply for the entire system operates at AC220V, 50Hz, providing a comprehensive and detailed overview of the CVD system's technical specifications and capabilities.
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