Bridgman Crystal growing furnace at 1650 ℃
1650℃ Bridgman crystal growth furnace is mainly used in the field of semiconductor materials, for the growth of a variety of single crystals, including silicon, sapphire, silicon nitride, silicon carbide, etc. It can grow high purity, high quality and large size single crystals for the production of semiconductor devices, lasers, optoelectronic devices, etc. In addition, the furnace can also be used to grow photovoltaic materials, magnetic materials, ferroelectric materials, etc.
Product Description
The 1650℃ Bridgman Crystal Growth Furnace stands as a pinnacle in high-temperature crystal growth technology, purposefully crafted for the cultivation of large, high-quality single crystals. At its core, the furnace boasts an impressive high-temperature capacity, reaching up to 1650℃, rendering it a versatile solution for diverse high-temperature crystal growth demands. The precision temperature control, facilitated by advanced technology, guarantees the reliability and excellence of crystal preparation. Its meticulously designed structure ensures uniformity and stability throughout the crystal growth process, while user-friendly operation and parameter control enhance the overall usability.
Operational efficiency and energy conservation are integral aspects of this furnace, employing energy-efficient materials to achieve exceptional heating efficiency and optimal energy utilization. Safety and reliability are paramount considerations, with the equipment constructed from high-quality materials and incorporating advanced safety technology, ensuring secure user operation and heightened equipment reliability. Specifically designed for semiconductor materials, the BG1650 model excels in growing single crystals like silicon, sapphire, silicon nitride, and silicon carbide, catering to the demands of semiconductor devices, lasers, optoelectronic devices, and beyond.
Delving into its technical specifications, the furnace operates with a maximum power supply of 15KW, achieving a rapid temperature rise to 1650℃ within an hour and maintaining a continuous operation at 1600℃. Utilizing a silicon molybdenum rod as the heating element, the furnace tube, crafted from high-purity alumina, features a diameter of 80mm and a length of 1700mm. Stainless steel sealing flanges provide flexibility for crystal growth in either a vacuum or atmosphere-protected environment. The Φ60 x 100mm alumina sample stand, with an embedded Type B thermocouple, facilitates real-time crucible temperature monitoring.
Automation is a key feature, with automatic sample table lifting aiding in crucible placement and sampling, offering a maximum stroke of 700mm. The three-temperature zone furnace body, each zone spanning 100mm, creates a substantial temperature gradient for optimized crystal growth conditions. A PID temperature control system allows the configuration of up to 30 rising and cooling procedures, complemented by super mild break protection and three Type B thermocouples for precise temperature monitoring. The furnace body's adjustable movement speed, ranging from 0.03 to 3mm per hour, further enhances its versatility. Assisting in maintaining desired vacuum conditions, a bipolar rotary vane vacuum pump with a capacity of 1.1L/s is incorporated. The power supply requirement is 220V at 50Hz, and the furnace is complemented by a 10L water cooler for efficient performance throughout crystal growth processes.
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