Carbon nanotube array, multi-walled
Synonym:
CNT array, MWCNT array
CAS Number:
308068-56-6
MDL number:
MFCD00133992
Note: Prices are for comparison only. Contact Sales for current pricing.
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
277.20 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
2 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
106.40 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
10 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
359.80 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
137.90 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
345.80 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
959.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
495.60 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
952.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
151.90 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
424.20 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
952.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
221.20 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
240.80 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
660.10 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
74.90 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
247.10 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
442.40 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
100 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
448.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
549.50 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
5 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
436.10 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
365.40 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
1 127.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
626.50 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
331.80 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
1 043.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
323.40 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
931.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
5 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
310.10 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
812.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
735.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
500 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
104.30 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
178.50 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
5 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
505.40 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
931.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
1 288.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
1 022.00 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
149.10 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
100 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
30.38 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
2 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
119.70 EUR
Purity:
>95% carbon basis (x'=ray)
Packing size:
10 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
324.80 EUR
Safety Information
Hazard Statements
H373
H317
H351
Precautionary Statements
P202
P280
P308 + P313
P302 + P352
P272
P260
Pictograms
